Probing Quantum Confinement within Single Core-Multishell Nanowires
Identifieur interne : 001653 ( Main/Repository ); précédent : 001652; suivant : 001654Probing Quantum Confinement within Single Core-Multishell Nanowires
Auteurs : RBID : Pascal:13-0003115Descripteurs français
- Pascal (Inist)
- Confinement quantique, Nanofil, Nanomatériau, Section efficace, Coupe transversale, Réseau hexagonal, Rayon X dur, Rayonnement synchrotron, Luminescence, Propriété optique, Fluorescence RX, Semiconducteur III-V, Composé III-V, Microscopie optique, Nitrure de gallium, Nitrure d'indium, Imagerie RX, Optoélectronique, Nanoélectronique, GaN, InGaN, 8107V, 8107B, 6146, 7867.
English descriptors
- KwdEn :
- Cross section, Cross sections, Gallium nitride, Hard x radiation, Hexagonal lattices, III-V compound, III-V semiconductors, Indium nitride, Luminescence, Nanoelectronics, Nanostructured materials, Nanowires, Optical microscopy, Optical properties, Optoelectronics, Quantum confinement, Synchrotron radiation, X ray fluorescence, X-ray imaging.
Abstract
Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging and calls for further studies on the underlying mechanisms of optoelectronic nanodevices.
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Pascal:13-0003115Le document en format XML
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<author><name sortKey="Martinez Criado, Gema" uniqKey="Martinez Criado G">Gema Martinez-Criado</name>
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<author><name sortKey="Yoo, Jinkyoung" uniqKey="Yoo J">Jinkyoung Yoo</name>
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<author><name sortKey="Yi, Gyu Chul" uniqKey="Yi G">Gyu-Chul Yi</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cross section</term>
<term>Cross sections</term>
<term>Gallium nitride</term>
<term>Hard x radiation</term>
<term>Hexagonal lattices</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Luminescence</term>
<term>Nanoelectronics</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Optical microscopy</term>
<term>Optical properties</term>
<term>Optoelectronics</term>
<term>Quantum confinement</term>
<term>Synchrotron radiation</term>
<term>X ray fluorescence</term>
<term>X-ray imaging</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Confinement quantique</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Section efficace</term>
<term>Coupe transversale</term>
<term>Réseau hexagonal</term>
<term>Rayon X dur</term>
<term>Rayonnement synchrotron</term>
<term>Luminescence</term>
<term>Propriété optique</term>
<term>Fluorescence RX</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Microscopie optique</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Imagerie RX</term>
<term>Optoélectronique</term>
<term>Nanoélectronique</term>
<term>GaN</term>
<term>InGaN</term>
<term>8107V</term>
<term>8107B</term>
<term>6146</term>
<term>7867</term>
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<front><div type="abstract" xml:lang="en">Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging and calls for further studies on the underlying mechanisms of optoelectronic nanodevices.</div>
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<fC01 i1="01" l="ENG"><s0>Theoretically core-multishell nanowires under a cross-section of hexagonal geometry should exhibit peculiar confinement effects. Using a hard X-ray nanobeam, here we show experimental evidence for carrier localization phenomena at the hexagon corners by combining synchrotron excited optical luminescence with simultaneous X-ray fluorescence spectroscopy. Applied to single coaxial n-GaN/InGaN multiquantum-well/p-GaN nanowires, our experiment narrows the gap between optical microscopy and high-resolution X-ray imaging and calls for further studies on the underlying mechanisms of optoelectronic nanodevices.</s0>
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<s5>05</s5>
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<s5>06</s5>
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<s5>15</s5>
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<s5>15</s5>
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